-
FQPF7N65C N Channel MOSFET
Quick Info :
- Drain Source Voltage (Vdss) : 650V
- Continuous Drain Current (Id) : 7A
- Power Dissipation (Pd) : 52W
- Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
- Gate Threshold Voltage (Vgs(th)@Id) : 4V@250uA
- Type : N Channel
Rs 1,300.00FQPF7N65C N Channel MOSFET
Rs 1,300.00 -
IRFP460 500V N-Channel MOSFET
Quick Info :
- : N Channel
- : 500V
- : 20A
- : 0.27ohm
Rs 690.00IRFP460 500V N-Channel MOSFET
Rs 690.00 - : N Channel
-
50N06 N Channel MOSFET Original
Quick Info :
- Drain Source Voltage (Vdss) : 60V
- Continuous Drain Current (Id) : 60A
- Drain Source On Resistance (RDS(on)@Vgs,Id) : 11mΩ@10V,60A
- Type : N Channel
Rs 490.0050N06 N Channel MOSFET Original
Rs 490.00 -
H20R1203 N Channel MOSFET
Quick Info :
- Type : N-Channel MOSFET
- Drain-Source Voltage : 1200V
- Continuous Drain Current : 20A (at 25°C)
- Pulsed Drain Current : 40A
- Gate-Source Voltage : ±30V
- Drain-Source On-Resistance : 0.190Ω
Rs 390.00H20R1203 N Channel MOSFET
Rs 390.00 -
IHW20N120R3 N Channel MOSFET
Quick Info:
- Type of IGBT Channel: N-Channel
- Maximum Power Dissipation (Pc), W: 310
- Maximum Collector-Emitter Voltage |Vce|, V: 1200
- Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
- Maximum Collector Current |Ic|, A: 40
Rs 390.00IHW20N120R3 N Channel MOSFET
Rs 390.00 -
IRF250 N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 150 W
- Maximum Drain-Source Voltage |Vds|: 200 V
- Maximum Drain Current |Id|: 30 A
Rs 390.00IRF250 N Channel MOSFET
Rs 390.00 -
FQA50N60 N-Channel MOSFET
Quick Info :
- Type: N-Channel MOSFET IGBT
- Collector-Emitter Voltage (V_CES): 600 V
- Gate-Emitter Voltage (V_GE): ±20 V
- Continuous Drain Current : 50A
- On-State Resistance : 0.18Ω
- 5 µs short-circuit capability
- Continuous Collector Current (I_C): 100 A (at 25°C), 50 A (at 100°C)
- Power Dissipation (P_D): 223 W (at 25°C), 89 W (at 100°C)
- High-speed switching capability
Rs 290.00FQA50N60 N-Channel MOSFET
Rs 290.00 -
MPG55N06 MOSFET
Quick Info :
- Drain-to-Source Breakdown Voltage : 60 V
- ID Drain Current (continuous) at Tc=25°C : 55 A
- IDM Drain Current (pulsed) : 200 A
- VGS Gate to Source Voltage : +/-20 V
Rs 290.00MPG55N06 MOSFET
Rs 290.00 -
20N60 N Channel MOSFET Original
Quick Inf :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 416 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 20 A
Rs 290.0020N60 N Channel MOSFET Original
Rs 290.00 -
SVF7N65CF N Channel MOSFET
Quick Info :
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id) : 7A
- Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
- Power Dissipation (Pd) : 46W
Rs 210.00SVF7N65CF N Channel MOSFET
Rs 210.00 -
IRF840 N-channel Power MOSFET
Quick Info :
- Number of Channels : 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds) :500V
- Continuous Drain Current (Id) :8A
Rs 210.00IRF840 N-channel Power MOSFET
Rs 210.00 -
IRF3205 N Channel MOSFET
Quick Info :
- N-Channel Power MOSFET
- Continuous Drain Current (ID) is 110A when VGS is 10V
- Minimum Gate threshold voltage 2V
- Drain to Source Breakdown Voltage: 55V
- Low On-Resistance of 8.0mΩ
- Gate-Source Voltage is (VGS) is ±20V
Rs 190.00IRF3205 N Channel MOSFET
Rs 190.00 -
IRFZ34N N-channel Power MOSFET
Quick Info :
- : N Channel
- : 55V
- : 29A
- : 0.04ohm
Rs 170.00IRFZ34N N-channel Power MOSFET
Rs 170.00 - : N Channel
-
IRFZ44N N-channel Power MOSFET
Quick Info :
- : N Channel
- : 55V
- : 41A
- : 0.0175ohm
Rs 160.00IRFZ44N N-channel Power MOSFET
Rs 160.00 - : N Channel
-
7N60C N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 142 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 7.4 A
Rs 140.007N60C N Channel MOSFET
Rs 140.00 -
6N60 N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 125 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 6.2 A
Rs 140.006N60 N Channel MOSFET
Rs 140.00 -
5N60 N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 5 A
Rs 140.005N60 N Channel MOSFET
Rs 140.00 -
3N60 N Channel MOSFET
Quick Info :
- Transistor Polarity: N-Channel
- Number of Channels: 1
- Channel Vds – Drain-Source Breakdown Voltage: 300 V
- Id – Continuous Drain Current: 3.2 A
Rs 140.003N60 N Channel MOSFET
Rs 140.00