IHW20N120R3 N Channel MOSFET

Rs 390.00

In stock

Quick Info:

  • Type of IGBT Channel: N-Channel
  • Maximum Power Dissipation (Pc), W: 310
  • Maximum Collector-Emitter Voltage |Vce|, V: 1200
  • Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
  • Maximum Collector Current |Ic|, A: 40
SKU: IHW20N120R3 Categories: ,

IHW20N120R3 is a N Channel MOSFET designed to sustain load voltage up to 1200V and 40 A current.

Specifications:

  • Type of IGBT Channel: N-Channel
  • Maximum Power Dissipation (Pc), W: 310
  • Maximum Collector-Emitter Voltage |Vce|, V: 1200
  • Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
  • Maximum Collector Current |Ic|, A: 40
  • Maximum Junction Temperature (Tj), °C: 175
  • Maximum Collector Capacity (Cc), pF: 50

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IHW20N120R3 N Channel MOSFET in Sri Lanka

IHW20N120R3 N Channel MOSFET

Rs 390.00

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