Quick Info :
Drain Source Voltage (Vdss) : 650V
Continuous Drain Current (Id) : 7A
Power Dissipation (Pd) : 52W
Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)@Id) : 4V@250uA
Type : N Channel
Rs 130.00
Quick Info :
Type: P-Channel Logic Level MOSFET
Voltage: -60V (Vds)
Current: -27A continuous
Logic Level: 3.3V/5V TTL compatible
Package: TO-220
Use: High-side switching, polarity protection, battery systems
Rs 120.00Rs 150.00
Specifications :
Transistor type: N-channel
Maximum applied voltage from drain-to-source (VDS): 200 V
Maximum Drain current (continuous) ID: 9 A
Maximum Drain Current (Pulse): 36 A
Maximum Power dissipation: 74 W
Rs 120.00
Quick Info :
N-Channel Power MOSFET
Continuous Drain Current (ID) is 110A when VGS is 10V
Minimum Gate threshold voltage 2V
Drain to Source Breakdown Voltage: 55V
Low On-Resistance of 8.0mΩ
Gate-Source Voltage is (VGS) is ±20V
Rs 100.00
Quick Info :
Transistor Polarity : N
Maximum Drain Source Voltage :100 V
Maximum Continuous Drain Current :27 A
Maximum Gate Source Voltage : ±20V
Power Dissipation : 130 W
Rs 90.00
Quick Info :
Type: N-Channel Logic Level MOSFET
Voltage: 30V (Vds)
Current: 62A continuous
Logic Level: 3.3V/5V TTL compatible
Package: TO-220
Use: ESP32/RPi switching, motor control, smart home
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 38 A
Rs 450.00
Quick Info :
Drain Source Voltage (Vdss) : 55V
Continuous Drain Current (Id) : 49A
Power Dissipation (Pd) : 94W
Rs 390.00
