Quick Inf :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 416 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 20 A
Rs 290.00
Quick Info :
Transistor Polarity: N-Channel
Number of Channels: 1
Channel Vds – Drain-Source Breakdown Voltage: 300 V
Id – Continuous Drain Current: 3.2 A
Rs 140.00
Quick Info :
Drain Source Voltage (Vdss) : 60V
Continuous Drain Current (Id) : 60A
Drain Source On Resistance (RDS(on)@Vgs,Id) : 11mΩ@10V,60A
Type : N Channel
Rs 490.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 5 A
Rs 140.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6.2 A
Rs 140.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 142 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 7.4 A
Rs 140.00
Quick Info :
Type: N-Channel MOSFET IGBT
Collector-Emitter Voltage (V_CES): 600 V
Gate-Emitter Voltage (V_GE): ±20 V
Continuous Drain Current : 50A
On-State Resistance : 0.18Ω
5 µs short-circuit capability
Continuous Collector Current (I_C): 100 A (at 25°C), 50 A (at 100°C)
Power Dissipation (P_D): 223 W (at 25°C), 89 W (at 100°C)
High-speed switching capability
Rs 290.00
Quick Info :
Drain Source Voltage (Vdss) : 650V
Continuous Drain Current (Id) : 7A
Power Dissipation (Pd) : 52W
Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)@Id) : 4V@250uA
Type : N Channel
Rs 1,300.00
Quick Info :
Type : N-Channel MOSFET
Drain-Source Voltage : 1200V
Continuous Drain Current : 20A (at 25°C)
Pulsed Drain Current : 40A
Gate-Source Voltage : ±30V
Drain-Source On-Resistance : 0.190Ω
Rs 390.00
Quick Info:
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 310
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
Maximum Collector Current |Ic|, A: 40
Rs 390.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Drain Current |Id|: 30 A
Rs 390.00
Quick Info :
N-Channel Power MOSFET
Continuous Drain Current (ID) is 110A when VGS is 10V
Minimum Gate threshold voltage 2V
Drain to Source Breakdown Voltage: 55V
Low On-Resistance of 8.0mΩ
Gate-Source Voltage is (VGS) is ±20V
Rs 190.00
Quick Info :
Transistor Polarity : N
Maximum Drain Source Voltage :100 V
Maximum Continuous Drain Current :27 A
Maximum Gate Source Voltage : ±20V
Power Dissipation : 130 W
Rs 90.00
Specifications :
Transistor type: N-channel
Maximum applied voltage from drain-to-source (VDS): 200 V
Maximum Drain current (continuous) ID: 9 A
Maximum Drain Current (Pulse): 36 A
Maximum Power dissipation: 74 W
Rs 120.00
Quick Info :
Number of Channels : 1 Channel
Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage (Vds) :500V
Continuous Drain Current (Id) :8A
Rs 210.00
Quick Info :
Transistor Polarity : N ChannelDrain Source Voltage Vds : 500VContinuous Drain Current Id : 20AOn Resistance Rds(on) : 0.27ohm
Rs 690.00
Quick Info :
Transistor Polarity : N ChannelDrain Source Voltage Vds : 55VContinuous Drain Current Id : 29AOn Resistance Rds(on) : 0.04ohm
Rs 170.00
Quick Info :
Transistor Polarity : N ChannelDrain Source Voltage Vds : 55VContinuous Drain Current Id : 41AOn Resistance Rds(on) : 0.0175ohm
Rs 160.00
