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20N60 N Channel MOSFET
Quick Inf :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 416 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 20 A
Rs 120.0020N60 N Channel MOSFET
Rs 120.003N60 N Channel MOSFET
Quick Info :
- Transistor Polarity: N-Channel
- Number of Channels: 1
- Channel Vds – Drain-Source Breakdown Voltage: 300 V
- Id – Continuous Drain Current: 3.2 A
Rs 140.003N60 N Channel MOSFET
Rs 140.0050N06 N Channel MOSFET
Quick Info :
- Drain Source Voltage (Vdss) : 60V
- Continuous Drain Current (Id) : 60A
- Drain Source On Resistance (RDS(on)@Vgs,Id) : 11mΩ@10V,60A
- Type : N Channel
Rs 490.0050N06 N Channel MOSFET
Rs 490.005N60 N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 5 A
Rs 140.005N60 N Channel MOSFET
Rs 140.006N60 N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 125 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 6.2 A
Rs 140.006N60 N Channel MOSFET
Rs 140.007N60C N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 142 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 7.4 A
Rs 140.007N60C N Channel MOSFET
Rs 140.00FQPF7N65C N Channel MOSFET
Quick Info :
- Drain Source Voltage (Vdss) : 650V
- Continuous Drain Current (Id) : 7A
- Power Dissipation (Pd) : 52W
- Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
- Gate Threshold Voltage (Vgs(th)@Id) : 4V@250uA
- Type : N Channel
Rs 1,300.00FQPF7N65C N Channel MOSFET
Rs 1,300.00IHW20N120R3 N Channel MOSFET
Quick Info:
- Type of IGBT Channel: N-Channel
- Maximum Power Dissipation (Pc), W: 310
- Maximum Collector-Emitter Voltage |Vce|, V: 1200
- Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
- Maximum Collector Current |Ic|, A: 40
Rs 390.00IHW20N120R3 N Channel MOSFET
Rs 390.00IRF250 N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 150 W
- Maximum Drain-Source Voltage |Vds|: 200 V
- Maximum Drain Current |Id|: 30 A
Rs 230.00IRF250 N Channel MOSFET
Rs 230.00IRF3205 N Channel MOSFET
Quick Info :
- N-Channel Power MOSFET
- Continuous Drain Current (ID) is 110A when VGS is 10V
- Minimum Gate threshold voltage 2V
- Drain to Source Breakdown Voltage: 55V
- Low On-Resistance of 8.0mΩ
- Gate-Source Voltage is (VGS) is ±20V
Rs 190.00IRF3205 N Channel MOSFET
Rs 190.00IRF540 N Channel MOSFET
Quick Info :
- Transistor Polarity : N
- Maximum Drain Source Voltage :100 V
- Maximum Continuous Drain Current :27 A
- Maximum Gate Source Voltage : ±20V
- Power Dissipation : 130 W
Rs 130.00IRF540 N Channel MOSFET
Rs 130.00IRF630 N Channel MOSFET
Specifications :
- Transistor type: N-channel
- Maximum applied voltage from drain-to-source (VDS): 200 V
- Maximum Drain current (continuous) ID: 9 A
- Maximum Drain Current (Pulse): 36 A
- Maximum Power dissipation: 74 W
Rs 120.00IRF630 N Channel MOSFET
Rs 120.00IRFZ34N N-channel Power MOSFET
Quick Info :
- : N Channel
- : 55V
- : 29A
- : 0.04ohm
Rs 170.00IRFZ34N N-channel Power MOSFET
Rs 170.00- : N Channel
IRFZ44N N-channel Power MOSFET
Quick Info :
- : N Channel
- : 55V
- : 41A
- : 0.0175ohm
Rs 190.00IRFZ44N N-channel Power MOSFET
Rs 190.00- : N Channel
MPG55N06 MOSFET
Quick Info :
- Drain-to-Source Breakdown Voltage : 60 V
- ID Drain Current (continuous) at Tc=25°C : 55 A
- IDM Drain Current (pulsed) : 200 A
- VGS Gate to Source Voltage : +/-20 V
Rs 290.00MPG55N06 MOSFET
Rs 290.00SVF7N65CF N Channel MOSFET
Quick Info :
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id) : 7A
- Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
- Power Dissipation (Pd) : 46W
Rs 210.00SVF7N65CF N Channel MOSFET
Rs 210.00IRF840 N-channel Power MOSFET
Quick Info :
- Number of Channels : 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds) :500V
- Continuous Drain Current (Id) :8A
Rs 140.00IRF840 N-channel Power MOSFET
Rs 140.00IRFP264 N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 280 W
- Maximum Drain-Source Voltage |Vds|: 250 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 38 A
Rs 450.00IRFP264 N Channel MOSFET
Rs 450.00
