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MPG55N06 MOSFET
Rs 290.00
Quick Info :
- Drain-to-Source Breakdown Voltage : 60 V
- ID Drain Current (continuous) at Tc=25°C : 55 A
- IDM Drain Current (pulsed) : 200 A
- VGS Gate to Source Voltage : +/-20 V
The MPG55N06 uses advanced trench technology and design to provide Excellent RDS(ON)
Specifications :
- Drain-to-Source Breakdown Voltage : 60 V
- ID Drain Current (continuous) at Tc=25°C : 55 A
- IDM Drain Current (pulsed) : 200 A
- VGS Gate to Source Voltage : +/-20 V
- Ptot Total Dissipation at Tc=25°C : 100 W
- Tj Max. Operating Junction Temperature : 175 °C
- Eas Single Pulse Avalanche Energy : 256 mj
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