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25N120 1200V Fast IGBT Power Transistor
Rs 390.00
Quick Info :
- Collector-Emitter Voltage : 1200 V
- Collector Current : 25 A
- Collector Current : 50 A
- Gate-Emitter Voltage : ±20 V
- Collector-Emitter Saturation Voltage : 2.1 V
The 25N120 is a fast Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. With a collector-emitter voltage rating of 1200V and a continuous collector current of 25A, this IGBT is ideal for use in power conversion, motor control, induction heating, and inverter applications.
Specification :
- Collector-Emitter Voltage : 1200 V
- Collector Current : 25 A
- Collector Current : 50 A
- Gate-Emitter Voltage : ±20 V
- Collector-Emitter Saturation Voltage : 2.1 V
- Total Gate Charge : 120 nC
- Switching Frequency : High-speed –
- Junction Temperature : -55 to 150 °C
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