Quick Info :
MOSFET Type : N-Channel Trench
Drain-Source Voltage (Vds) : 100V
Continuous Drain Current (Id) : 120A
RDS(on) : Low on-resistance
Rs 380.00Rs 460.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Drain Current |Id|: 30 A
Rs 390.00
Quick Info:
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 310
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
Maximum Collector Current |Ic|, A: 40
Rs 390.00
Quick Info :
Type : N-Channel MOSFET
Drain-Source Voltage : 1200V
Continuous Drain Current : 20A (at 25°C)
Pulsed Drain Current : 40A
Gate-Source Voltage : ±30V
Drain-Source On-Resistance : 0.190Ω
Rs 390.00
Quick Info :
Drain Source Voltage (Vdss) : 60V
Continuous Drain Current (Id) : 60A
Drain Source On Resistance (RDS(on)@Vgs,Id) : 11mΩ@10V,60A
Type : N Channel
Rs 490.00
Quick Info :
Transistor Polarity : N ChannelDrain Source Voltage Vds : 500VContinuous Drain Current Id : 20AOn Resistance Rds(on) : 0.27ohm
Rs 690.00
Quick Info :
Drain Source Voltage (Vdss) : 55V
Continuous Drain Current (Id) : 49A
Power Dissipation (Pd) : 94W
Rs 390.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 38 A
Rs 450.00
