Quick Info :
Drain-to-Source Breakdown Voltage : 60 V
ID Drain Current (continuous) at Tc=25°C : 55 A
IDM Drain Current (pulsed) : 200 A
VGS Gate to Source Voltage : +/-20 V
Rs 290.00
Quick Info :
Drain Source Voltage (Vdss): 650V
Continuous Drain Current (Id) : 7A
Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
Power Dissipation (Pd) : 46W
Rs 210.00
Quick Info :
Type : N-Channel MOSFET
Drain-Source Voltage : 1200V
Continuous Drain Current : 20A (at 25°C)
Pulsed Drain Current : 40A
Gate-Source Voltage : ±30V
Drain-Source On-Resistance : 0.190Ω
Rs 390.00
Quick Info:
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 310
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
Maximum Collector Current |Ic|, A: 40
Rs 390.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Drain Current |Id|: 30 A
Rs 390.00
Quick Info :
N-Channel Power MOSFET
Continuous Drain Current (ID) is 110A when VGS is 10V
Minimum Gate threshold voltage 2V
Drain to Source Breakdown Voltage: 55V
Low On-Resistance of 8.0mΩ
Gate-Source Voltage is (VGS) is ±20V
Rs 100.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 38 A
Rs 450.00
Quick Info :
Drain Source Voltage (Vdss) : 55V
Continuous Drain Current (Id) : 49A
Power Dissipation (Pd) : 94W
Rs 390.00
