MDP1991 N Channel Trench MOSFET 100V 120A

The MDP1991 N-Channel Trench MOSFET is a high-performance power transistor designed for demanding high-current and high-voltage applications. With a drain-source voltage rating of 100V and a continuous drain current of up to 120A, this MOSFET is ideal for power supplies, motor drivers, inverters, battery management systems, and DC-DC converters. Built using advanced trench MOSFET technology, the MDP1991 offers low RDS(on), ensuring reduced conduction losses and improved efficiency. This makes it particularly suitable for applications where thermal performance and energy efficiency are critical. Its fast switching characteristics help minimize switching losses, making it reliable for high-frequency operation.

The rugged construction and excellent thermal stability allow the MDP1991 to perform consistently even under heavy load conditions. Whether you are designing industrial power electronics or high-current DIY projects, this MOSFET delivers dependable performance and long-term reliability.

Specification :

• MOSFET Type : N-Channel Trench
• Drain-Source Voltage (Vds) : 100V
• Continuous Drain Current (Id) : 120A
• RDS(on) : Low on-resistance
• Gate Threshold Voltage : Low gate drive compatible
• Power Dissipation : High efficiency design
• Package Type : Power MOSFET package
• Application : Power switching, motor control, inverters