IRF840 N-channel Power MOSFET

IRF840 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features :

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Compliant to RoHS directive 2002/95/EC

Specifications :

• Number of Channels : 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds) :500V
• Continuous Drain Current (Id) :8A
• Drain-Source Resistance (Rds On) :850mOhms
• Gate-Source Voltage (Vgs) :20V
• Gate Charge (Qg) :39 nC
• Operating Temperature Range :-65 – 150°C
• Power Dissipation (Pd) :125W