IRF630 N Channel MOSFET

IRF630 N Channel MOSFET designed to sustain load voltage up to 200 V and 9 A current. It can drive current up to 36 A in pulse mode for 300 μs with a duty cycle of 2%.

This Power MOSFET is specially designed to minimize input capacitance and gate change, and available in package TO-220.

Specifications :

• Transistor type: N-channel
• Maximum applied voltage from drain-to-source (VDS): 200 V
• Maximum Drain current (continuous) ID: 9 A
• Maximum Drain Current (Pulse): 36 A
• Maximum Power dissipation: 74 W
• On-state resistance between drain and source: 0.40 Ω
• gate-to-source voltage: ±20 V
• Gate charge QD: 43 nC
• Dynamic dv/dt ruggedness: 5.8 V/ns
• Operating junction and storage temperature range: -55 to 150 ˚C
• Package: TO-220

Applications :

• Solar power supply application
• Motor drivers
• Battery charger
• Telecommunication applications
• High-speed switching applications
• Power management
• Portable devices