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IHW20N120R3 N Channel MOSFET
Rs 390.00
Quick Info:
- Type of IGBT Channel: N-Channel
- Maximum Power Dissipation (Pc), W: 310
- Maximum Collector-Emitter Voltage |Vce|, V: 1200
- Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
- Maximum Collector Current |Ic|, A: 40
IHW20N120R3 is a N Channel MOSFET designed to sustain load voltage up to 1200V and 40 A current.
Specifications:
- Type of IGBT Channel: N-Channel
- Maximum Power Dissipation (Pc), W: 310
- Maximum Collector-Emitter Voltage |Vce|, V: 1200
- Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
- Maximum Collector Current |Ic|, A: 40
- Maximum Junction Temperature (Tj), °C: 175
- Maximum Collector Capacity (Cc), pF: 50
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