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50N60 N Channel MOSFET IGBT
Rs 290.00
Quick Info :
- Type: N-Channel MOSFET IGBT
- Collector-Emitter Voltage (V_CES): 600 V
- Gate-Emitter Voltage (V_GE): ±20 V
- Continuous Drain Current : 50A
- On-State Resistance : 0.18Ω
- 5 µs short-circuit capability
- Continuous Collector Current (I_C): 100 A (at 25°C), 50 A (at 100°C)
- Power Dissipation (P_D): 223 W (at 25°C), 89 W (at 100°C)
- High-speed switching capability
The 50N60 N Channel MOSFET is an advanced Insulated Gate Bipolar Transistor (IGBT) designed for high-performance switching applications. It features a robust trench construction with field-stop technology, offering a cost-effective solution for power electronics.
Specification :
- Type: N-Channel MOSFET IGBT
- Collector-Emitter Voltage (V_CES): 600 V
- Gate-Emitter Voltage (V_GE): ±20 V
- Continuous Drain Current : 50A
- On-State Resistance : 0.18Ω
- 5 µs short-circuit capability
- Continuous Collector Current (I_C): 100 A (at 25°C), 50 A (at 100°C)
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