25N120 1200V Fast IGBT Power Transistor

The 25N120 is a fast Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. With a collector-emitter voltage rating of 1200V and a continuous collector current of 25A, this IGBT is ideal for use in power conversion, motor control, induction heating, and inverter applications.

Specification :

• Collector-Emitter Voltage : 1200 V
• Collector Current : 25 A
• Collector Current : 50 A
• Gate-Emitter Voltage :  ±20 V
• Collector-Emitter Saturation Voltage :  2.1 V
• Total Gate Charge  : 120 nC
• Switching Frequency : High-speed –
• Junction Temperature  : -55 to 150 °C