Quick Info :
Drain-to-Source Breakdown Voltage : 60 V
ID Drain Current (continuous) at Tc=25°C : 55 A
IDM Drain Current (pulsed) : 200 A
VGS Gate to Source Voltage : +/-20 V
Rs 290.00
Quick Info:
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 310
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
Maximum Collector Current |Ic|, A: 40
Rs 390.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6.2 A
Rs 140.00
Quick Info :
Transistor Polarity: N-Channel
Number of Channels: 1
Channel Vds – Drain-Source Breakdown Voltage: 300 V
Id – Continuous Drain Current: 3.2 A
Rs 140.00
Quick Info :
N-Channel Power MOSFET
Continuous Drain Current (ID) is 110A when VGS is 10V
Minimum Gate threshold voltage 2V
Drain to Source Breakdown Voltage: 55V
Low On-Resistance of 8.0mΩ
Gate-Source Voltage is (VGS) is ±20V
Rs 100.00
Quick Info :
Transistor Polarity : N
Maximum Drain Source Voltage :100 V
Maximum Continuous Drain Current :27 A
Maximum Gate Source Voltage : ±20V
Power Dissipation : 130 W
Rs 90.00
Quick Info :
Drain Source Voltage (Vdss) : 55V
Continuous Drain Current (Id) : 49A
Power Dissipation (Pd) : 94W
Rs 390.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 38 A
Rs 450.00
