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IRLB8721 N Channel MOSFET 3V3 TTL Compatible
Quick Info :
- Type: N-Channel Logic Level MOSFET
- Voltage: 30V (Vds)
- Current: 62A continuous
- Logic Level: 3.3V/5V TTL compatible
- Package: TO-220
- Use: ESP32/RPi switching, motor control, smart home
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IRF540 N Channel MOSFET
Quick Info :
- Transistor Polarity : N
- Maximum Drain Source Voltage :100 V
- Maximum Continuous Drain Current :27 A
- Maximum Gate Source Voltage : ±20V
- Power Dissipation : 130 W
Rs 90.00IRF540 N Channel MOSFET
Rs 90.00 -
IRF3205 HEXFET Power MOSFET 55V 110A
Quick Info :
- N-Channel Power MOSFET
- Continuous Drain Current (ID) is 110A when VGS is 10V
- Minimum Gate threshold voltage 2V
- Drain to Source Breakdown Voltage: 55V
- Low On-Resistance of 8.0mΩ
- Gate-Source Voltage is (VGS) is ±20V
Rs 100.00IRF3205 HEXFET Power MOSFET 55V 110A
Rs 100.00 -
IRF630 N Channel MOSFET
Specifications :
- Transistor type: N-channel
- Maximum applied voltage from drain-to-source (VDS): 200 V
- Maximum Drain current (continuous) ID: 9 A
- Maximum Drain Current (Pulse): 36 A
- Maximum Power dissipation: 74 W
Rs 120.00IRF630 N Channel MOSFET
Rs 120.00 -
FQP27P06 P Channel MOSFET 3V3 TTL Compatible
Quick Info :
- Type: P-Channel Logic Level MOSFET
- Voltage: -60V (Vds)
- Current: -27A continuous
- Logic Level: 3.3V/5V TTL compatible
- Package: TO-220
- Use: High-side switching, polarity protection, battery systems
Rs 120.00Rs 150.00FQP27P06 P Channel MOSFET 3V3 TTL Compatible
Rs 120.00Rs 150.00 -
FQPF7N65C N Channel MOSFET
Quick Info :
- Drain Source Voltage (Vdss) : 650V
- Continuous Drain Current (Id) : 7A
- Power Dissipation (Pd) : 52W
- Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
- Gate Threshold Voltage (Vgs(th)@Id) : 4V@250uA
- Type : N Channel
Rs 130.00FQPF7N65C N Channel MOSFET
Rs 130.00 -
3N60 N Channel MOSFET
Quick Info :
- Transistor Polarity: N-Channel
- Number of Channels: 1
- Channel Vds – Drain-Source Breakdown Voltage: 300 V
- Id – Continuous Drain Current: 3.2 A
Rs 140.003N60 N Channel MOSFET
Rs 140.00 -
5N60 N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 5 A
Rs 140.005N60 N Channel MOSFET
Rs 140.00 -
6N60 N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 125 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 6.2 A
Rs 140.006N60 N Channel MOSFET
Rs 140.00 -
7N60C N Channel MOSFET
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 142 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 7.4 A
Rs 140.007N60C N Channel MOSFET
Rs 140.00 -
IRFZ44N N-channel Power MOSFET
Quick Info :
- : N Channel
- : 55V
- : 41A
- : 0.0175ohm
Rs 150.00IRFZ44N N-channel Power MOSFET
Rs 150.00 - : N Channel
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IRLZ44 N Channel MOSFET 5V TTL Compatible
Quick Info :
- Type: N-Channel Logic Level MOSFET
- Voltage: 55V (Vds)
- Current: 47A continuous
- Logic Level: 5V TTL compatible
- Package: TO-220
- Use: Arduino/MCU switching, motor control, LED drivers
Rs 150.00Rs 200.00IRLZ44 N Channel MOSFET 5V TTL Compatible
Rs 150.00Rs 200.00 -
IRFZ34N N-channel Power MOSFET
Quick Info :
- : N Channel
- : 55V
- : 29A
- : 0.04ohm
Rs 170.00IRFZ34N N-channel Power MOSFET
Rs 170.00 - : N Channel
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IRF840 N-channel Power MOSFET
Quick Info :
- Number of Channels : 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds) :500V
- Continuous Drain Current (Id) :8A
Rs 210.00IRF840 N-channel Power MOSFET
Rs 210.00 -
SVF7N65CF N Channel MOSFET
Quick Info :
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id) : 7A
- Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
- Power Dissipation (Pd) : 46W
Rs 210.00SVF7N65CF N Channel MOSFET
Rs 210.00 -
20N60 N Channel MOSFET Original
Quick Inf :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 416 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 20 A
Rs 290.0020N60 N Channel MOSFET Original
Rs 290.00 -
MPG55N06 MOSFET
Quick Info :
- Drain-to-Source Breakdown Voltage : 60 V
- ID Drain Current (continuous) at Tc=25°C : 55 A
- IDM Drain Current (pulsed) : 200 A
- VGS Gate to Source Voltage : +/-20 V
Rs 290.00MPG55N06 MOSFET
Rs 290.00 -
FQA50N60 N-Channel MOSFET
Quick Info :
- Type: N-Channel MOSFET IGBT
- Collector-Emitter Voltage (V_CES): 600 V
- Gate-Emitter Voltage (V_GE): ±20 V
- Continuous Drain Current : 50A
- On-State Resistance : 0.18Ω
- 5 µs short-circuit capability
- Continuous Collector Current (I_C): 100 A (at 25°C), 50 A (at 100°C)
- Power Dissipation (P_D): 223 W (at 25°C), 89 W (at 100°C)
- High-speed switching capability
Rs 290.00FQA50N60 N-Channel MOSFET
Rs 290.00
