Quick Info :
Diode Configuration :Single
Reverse Voltage (Vr) : 600V
Forward Voltage (Vf@If) : 2.5V@1A
Rs 70.00
Quick Info :
Transistor Type: PNP
Power Dissipation (Pd): 150W
Collector Current (Ic): 15A
Rs 690.00
Quick Info :
Drain Source Voltage (Vdss) : 60V
Continuous Drain Current (Id) : 60A
Drain Source On Resistance (RDS(on)@Vgs,Id) : 11mΩ@10V,60A
Type : N Channel
Rs 490.00
Quick Info :
Drain Source Voltage (Vdss) : 650V
Continuous Drain Current (Id) : 7A
Power Dissipation (Pd) : 52W
Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)@Id) : 4V@250uA
Type : N Channel
Rs 1,300.00
Quick Info :
Drain Source Voltage (Vdss): 650V
Continuous Drain Current (Id) : 7A
Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
Power Dissipation (Pd) : 46W
Rs 210.00
Quick Info :
Power supply: 3-5v (Recommended 3.3v)
Communication mode: Standard IIC/SPI communication protocol
Chip built in AD 16bit converter, 16 bit data output
Gyro range: ±125 ±250 ±500 ±1000 ±2000 degrees /s
Rs 750.00
Quick Info :
Operates with a single 3.3 V Supply
Bus Pin ESD Protection Exceeds ±16 kV HBM
High Input Impedance Allows for Up to 120 Nodes on a Bus
Rs 690.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 38 A
Rs 450.00
Quick Inf :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 416 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 20 A
Rs 290.00
Quick Info:
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 310
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
Maximum Collector Current |Ic|, A: 40
Rs 390.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 142 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 7.4 A
Rs 140.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Drain Current |Id|: 30 A
Rs 390.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6.2 A
Rs 140.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 5 A
Rs 140.00
Quick Info :
Transistor Polarity: N-Channel
Number of Channels: 1
Channel Vds – Drain-Source Breakdown Voltage: 300 V
Id – Continuous Drain Current: 3.2 A
Rs 140.00
Quick Info :
N-Channel Power MOSFET
Continuous Drain Current (ID) is 110A when VGS is 10V
Minimum Gate threshold voltage 2V
Drain to Source Breakdown Voltage: 55V
Low On-Resistance of 8.0mΩ
Gate-Source Voltage is (VGS) is ±20V
Rs 190.00
Quick Info :
Transistor Polarity : N
Maximum Drain Source Voltage :100 V
Maximum Continuous Drain Current :27 A
Maximum Gate Source Voltage : ±20V
Power Dissipation : 130 W
Rs 90.00
Specifications :
Transistor type: N-channel
Maximum applied voltage from drain-to-source (VDS): 200 V
Maximum Drain current (continuous) ID: 9 A
Maximum Drain Current (Pulse): 36 A
Maximum Power dissipation: 74 W
Rs 120.00
