IRF630 N Channel MOSFET

Rs 120.00

In stock

Specifications :

  • Transistor type: N-channel
  • Maximum applied voltage from drain-to-source (VDS): 200 V
  • Maximum Drain current (continuous) ID: 9 A
  • Maximum Drain Current (Pulse): 36 A
  • Maximum Power dissipation: 74 W

SKU: IRF630 Categories: ,

IRF630 N Channel MOSFET designed to sustain load voltage up to 200 V and 9 A current. It can drive current up to 36 A in pulse mode for 300 μs with a duty cycle of 2%.

This Power MOSFET is specially designed to minimize input capacitance and gate change, and available in package TO-220.

Specifications :

  • Transistor type: N-channel
  • Maximum applied voltage from drain-to-source (VDS): 200 V
  • Maximum Drain current (continuous) ID: 9 A
  • Maximum Drain Current (Pulse): 36 A
  • Maximum Power dissipation: 74 W
  • On-state resistance between drain and source: 0.40 Ω
  • gate-to-source voltage: ±20 V
  • Gate charge QD: 43 nC
  • Dynamic dv/dt ruggedness: 5.8 V/ns
  • Operating junction and storage temperature range: -55 to 150 ˚C
  • Package: TO-220

Applications :

  • Solar power supply application
  • Motor drivers
  • Battery charger
  • Telecommunication applications
  • High-speed switching applications
  • Power management
  • Portable devices

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IRF630 N Channel MOSFET in Sri Lanka

IRF630 N Channel MOSFET

Rs 120.00

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