BD139 NPN Power Transistor

The BD139 is a high-power NPN transistor designed for general-purpose amplification and switching applications. It offers excellent performance for medium-power switching and amplification in low- and medium-frequency circuits.

Specification :

• Transistor Type: NPN
• Voltage Ratings:
  • Collector-Emitter Voltage (Vce): 80V
  • Collector-Base Voltage (Vcb): 80V
  • Emitter-Base Voltage (Veb): 5V
• Current Ratings:
  • Continuous Collector Current (Ic): 1.5A
  • Peak Collector Current (Icm): 3A
• Power Dissipation (Pd): 50W
• Current Gain (hFE): 40 to 320 (at Ic = 150mA)
• Collector-Emitter Saturation Voltage (Vce(sat)): ≤ 2V at Ic = 1A
• Transition Frequency (ft): 120MHz (Typical)
• Operating Temperature Range: -55°C to +150°C