Quick Info :
Drain Source Voltage (Vdss) : 55V
Continuous Drain Current (Id) : 49A
Power Dissipation (Pd) : 94W
Rs 390.00
Quick Info :
Nominal Zener Voltage (VZ): 4.7V
Power dissipation (PZ): 1300mW (practically 500mW)
Zener regulator current (IZm): 193mA
Rs 45.00
Quick Info :
Transistor Type: NPN
Collector-Emitter Breakdown Voltage (Vceo): 230V
Power Dissipation (Pd): 180W
DC Current Gain (hFE@Ic,Vce): 70@5A,4V
Collector Current (Ic): 17A
Rs 690.00
Quick Info :
Transistor Type: PNP
Collector-Emitter Breakdown Voltage (Vceo): 140V
Power Dissipation (Pd): 100W
Collector Current (Ic): 10A
Rs 450.00
Quick Info :
Diode Configuration :Single
Reverse Voltage (Vr) : 600V
Forward Voltage (Vf@If) : 2.5V@1A
Rs 70.00
Quick Info :
Drain-to-Source Breakdown Voltage : 60 V
ID Drain Current (continuous) at Tc=25°C : 55 A
IDM Drain Current (pulsed) : 200 A
VGS Gate to Source Voltage : +/-20 V
Rs 290.00
Quick Info :
Drain Source Voltage (Vdss) : 60V
Continuous Drain Current (Id) : 60A
Drain Source On Resistance (RDS(on)@Vgs,Id) : 11mΩ@10V,60A
Type : N Channel
Rs 490.00
Quick Info :
Transistor Type: PNP
Power Dissipation (Pd): 150W
Collector Current (Ic): 15A
Rs 690.00
Quick Info :
Drain Source Voltage (Vdss) : 650V
Continuous Drain Current (Id) : 7A
Power Dissipation (Pd) : 52W
Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)@Id) : 4V@250uA
Type : N Channel
Rs 1,300.00
Quick Info :
Drain Source Voltage (Vdss): 650V
Continuous Drain Current (Id) : 7A
Drain Source On Resistance (RDS(on)@Vgs,Id) : 1.4Ω@10V,3.5A
Power Dissipation (Pd) : 46W
Rs 210.00
Quick Info :
Main Chip: PAM8610
Power Range: DC 6V-15V (self-protection)
Recommended Voltage: DC 12V(2A)
Output Power: 10Wx2(8Ω) 15Wx2(4Ω)
Rs 490.00
Quick Info :
Power supply: 3-5v (Recommended 3.3v)
Communication mode: Standard IIC/SPI communication protocol
Chip built in AD 16bit converter, 16 bit data output
Gyro range: ±125 ±250 ±500 ±1000 ±2000 degrees /s
Rs 750.00
Quick Info :
Operates with a single 3.3 V Supply
Bus Pin ESD Protection Exceeds ±16 kV HBM
High Input Impedance Allows for Up to 120 Nodes on a Bus
Rs 690.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 38 A
Rs 450.00
Quick Inf :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 416 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 20 A
Rs 290.00
Quick Info:
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 310
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 1.48
Maximum Collector Current |Ic|, A: 40
Rs 390.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 142 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 7.4 A
Rs 140.00
Quick Info :
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Drain Current |Id|: 30 A
Rs 390.00
