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IRFP264 N Channel MOSFET
Rs 450.00
Quick Info :
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 280 W
- Maximum Drain-Source Voltage |Vds|: 250 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 38 A
20N60 is a N Channel MOSFET designed to sustain load voltage up to 250v and 38 A current.
Specifications:
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 280 W
- Maximum Drain-Source Voltage |Vds|: 250 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 38 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 210(max) nC
- Rise Time (tr): 99 nS
- Drain-Source Capacitance (Cd): 870 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm
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